Symbol. Parameter. Value. Unit. BFY BFY VCBO. Collector-Base Voltage ( IE = 0). V. VCEO. Collector-Emitter Voltage (IB = 0). V. VEBO. BFY51 datasheet, BFY51 pdf, BFY51 data sheet, datasheet, data sheet, pdf, Central Semiconductor, Leaded Small Signal Transistor General Purpose. BFY51 Transistor Datasheet pdf, BFY51 Equivalent. Parameters and Characteristics.
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Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. This data sheet contains final product specifications.
Stress above one or more datasheeet the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is datwsheet, it is advisory and does not form part of the specification.
Philips customers using or selling datxsheet products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale Apr 22 7.
BoxTelFax Belarus: Hotel Minsk Business Center, Bld. Philips Semiconductors Philippines Inc. Philips Semiconductors, 6F, No.
(PDF) BFY51 Datasheet download
V SCA54 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any dxtasheet or contract, is believed to be accurate and reliable and may be changed without notice.
Datqsheet liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. RF transistor with internal bias circuit. Benefit is lower component count, internal compensation for temperature and current gain spread.
High-speed switching No secondary breakdown.
Description in a plastic package using TrenchMOS technology. General description NPN general-purpose transistors. They are designed for high speed.
All leads are isolated. General description PNP general-purpose transistors.
BFY51 데이터시트(PDF) – STMicroelectronics
NPN transistors Applications Audio, general purpose switching and amplifier transistors Description The devices are manufactured in Planar technology with. Suitable for applications requiring low noise and good h FE linearity, eg. Designed for general-purpose amplifier and low speed switching applications. Product overview Type number. High oltage Bcy51 Features: High voltage fast-switching NPN power transistor Datasheet production data Features Low spread of dynamic parameters Minimum lot-to-lot spread for reliable operation Very high switching speed Applications.
Designed for use in general purpose power amplifier and switching applications. General description NPN general-purpose transistors in small plastic packages. This Datasheet is presented by the m anufacturer. Please v isit datasheft website for pricing and availability at www. Global Network Access International Access Daatasheet We know that you need to communicate with your partners, colleagues and customers around the world.
We make every effort to understand the difficulties. Start display at page:. Avis Eustacia Chase 1 years ago Views: Product specification Supersedes data of Apr Product specification Supersedes data of Sep Product specification Supersedes data of May N-channel enhancement mode field-effect transistor Rev.
Product data sheet Supersedes data of Oct Product specification Supersedes data of Feb Product data sheet Supersedes data of Jan NPN medium power transistor. They are designed for high speed More information. Low voltage PNP power transistor. All leads are isolated More information. Product data sheet Supersedes data of May Low voltage NPN power Darlington transistor.
NPN transistors Applications Audio, general purpose switching and amplifier transistors Description The devices are manufactured in Planar technology with More information. Quick reference data Rev. Product overview Type number More information. High voltage fast-switching NPN power transistor. dstasheet
Description High voltage fast-switching NPN power transistor Datasheet production data Features Low spread of dynamic parameters Minimum lot-to-lot spread for reliable operation Very high switching speed Applications More information. Characteristic Symbol Rating Unit. A linear amplifier 1.
Product specification Supersedes data of Aug Secondary protection for DSL hfy51.
NPN general-purpose transistors in small plastic packages. TDA Light position controller. Protection for Ethernet lines. BB Low-voltage variable capacitance double diode.
BFY51 Datasheet, Equivalent, Cross Reference Search